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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE180/181/182
DESCRIPTION *With TO-126 package *Complement to type MJE170/171/172 APPLICATIONS *For low power audio amplifier and low current high speed switching applications PINNING (see Fig.2)
PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL PARAMETER MJE180 VCBO Collector-base voltage MJE181 MJE182 MJE180 VCEO Collector-emitter voltage MJE181 MJE182 VEBO IC ICM IB PC Ti Tstg Emitter-base voltage Collector current Collector current-peak Base current Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 12.5 150 -65~150 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 40 60 80 7 3 6 1 1.5 W V A A A V V UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER MJE180 V(BR)CEO Collector-emitter breakdown voltage MJE181 MJE182 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage MJE180 ICBO Collector cut-off current MJE181 MJE182 IEBO hFE-1 hFE-2 hFE-3 fT COB Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance IC=500mA ;IB=50mA IC=1.5A ;IB=150mA IC=3A ;IB=600mA IC=1.5A ;IB=150mA IC=3A ;IB=600mA IC=500mA ; VCE=1V VCB=60V; IE=0 TC=150 VCB=80V; IE=0 TC=150 VCB=100V; IE=0 TC=150 VEB=7V; IC=0 IC=100mA ; VCE=1V IC=500mA ; VCE=1V IC=1.5A ; VCE=1V IC=100mA ; VCE=10V IE=0 ; VCB=10V,f=0.1MHz IC=10mA;IB=0 CONDITIONS SYMBOL
MJE180/181/182
MIN 40 60 80
TYP.
MAX
UNIT
V
0.3 0.9 1.7 1.5 2.0 1.2 0.1 0.1 0.1 0.1 0.1 0.1 0.1 50 30 12 50 30 250
V V V V V V A mA A mA A mA A
MHz pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE180/181/182
Fig.2 Outline dimensions
3


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